SJPB-H6VR: las condiciones de los productos de la categoría 1
fabricante:
Sanken Electric EE.UU. Inc.
Descripción:
DIODE SCHOTTKY 60V 2A SJP
Categoría:
Productos de semiconductor discretos
Especificaciones
Category:
Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
200 µA @ 60 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
690 mV @ 2 A
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
SJP
Mfr:
Sanken Electric USA Inc.
Technology:
Schottky
Operating Temperature - Junction:
-40°C ~ 150°C
Package / Case:
2-SMD, J-Lead
Voltage - DC Reverse (Vr) (Max):
60 V
Current - Average Rectified (Io):
2A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Base Product Number:
SJPB-H6
Introducción
Diodo 60 V 2A montado en la superficie SJP
Related Products
Se aplicará el método siguiente:
DIODE GEN PURP 600V 10A TO220F
SJPB-H9VL
DIODE SCHOTTKY 90V 2A SJP
SJPL-H2VL
DIODE GEN PURP 200V 2A SJP
Se aplicará el procedimiento siguiente:
DIODE GEN PURP 600V 10A TO220F
El SARS01V1
DIODE GEN PURP 800V 1.2A AXIAL
SJPX-F2VR
DIODE GEN PURP 200V 1.5A SJP
El SARS05VL
DIODE GEN PURP 800V 1A SMD
| Imagen | parte # | Descripción | |
|---|---|---|---|
|
|
Se aplicará el método siguiente: |
DIODE GEN PURP 600V 10A TO220F
|
|
|
|
SJPB-H9VL |
DIODE SCHOTTKY 90V 2A SJP
|
|
|
|
SJPL-H2VL |
DIODE GEN PURP 200V 2A SJP
|
|
|
|
Se aplicará el procedimiento siguiente: |
DIODE GEN PURP 600V 10A TO220F
|
|
|
|
El SARS01V1 |
DIODE GEN PURP 800V 1.2A AXIAL
|
|
|
|
SJPX-F2VR |
DIODE GEN PURP 200V 1.5A SJP
|
|
|
|
El SARS05VL |
DIODE GEN PURP 800V 1A SMD
|
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Común:
MOQ: