FQPF6N80C
fabricante:
En el caso de las
Descripción:
MOSFET N-CH 800V 5.5A TO220F
Categoría:
Productos de semiconductor discretos
Especificaciones
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 2.75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Product Status:
Last Time Buy
Input Capacitance (Ciss) (Max) @ Vds:
1310 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220F-3
Mfr:
onsemi
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Power Dissipation (Max):
51W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQPF6
Introducción
N-canal 800 V 5.5A (Tc) 51W (Tc) a través del agujero TO-220F-3
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